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TSMF3710
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
Description
TSMF3710 is a high speed infrared emitting diode in GaAlAs double hetero (DH) technology in a miniature PLCC-2 SMD package. DH technology combines high speed with high radiant power at wavelength of 870 nm.
Features
* * * * * * * * * * * High radiant power High speed tr = 30 ns High modulation band width fc = 12 MHz Peak wavelength p = 870 nm High reliability
94 8553
e3
Applications
* High speed IR data transmission * High power emitter for low space applications * High performance transmissive or reflective sensors
Low forward voltage Suitable for high pulse current application Wide angle of half intensity Compatible with automatic placement equipment EIA and ICE standard package Suitable for infrared, vapor phase and wavesolder process * 8mm tape and reel standard: GS08 or GS18 * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Parts Table
Part TSMF3710-GS08 TSMF3710-GS18 TSMF3710-GS08 TSMF3710-GS18 Ordering code MOQ: 7500 pc MOQ: 8000 pc Remarks
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Parameter Reverse voltage Forward current Peak forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t 10 sec tp/T = 0.5, tp = 100 s tp = 100 s Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1 170 100 - 40 to + 85 - 40 to + 100 260 450 Unit V mA mA A mW C C C C K/W
Document Number 81088 Rev. 1.3, 21-Feb-07
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TSMF3710
Vishay Semiconductors
Basic Characteristics
Tamb = 25 C, unless otherwise specified Parameter Forward voltage Temp. coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temp. coefficient of e Angle of half intensity Peak wavelength Spectral bandwidth Temp. coefficient of p Rise time Fall time Virtual source size IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA Test condition IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 100 mA, tp = 20 ms IF = 100 mA Symbol VF VF TKVF IR Cj Ie Ie e TKe p TKp tr tf 125 10 100 40 -0.35 60 870 40 0.25 30 30 0.44 22 Min Typ. 1.5 2.3 -2.1 10 Max 1.8 Unit V V mV/K A pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns mm
Typical Characteristics
Tamb = 25 C, unless otherwise specified
200 P V - Power Dissipation (mW) I F - Forward Current (mA)
125 100 R thJA 75 50 25 0 0 20 40 60 80 100
14847
150 R thJA 100
50
0
14846
0
20
40
60
80
100
Tamb - Ambient Temperature (C)
Tamb - Ambient Temperature (C)
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
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Document Number 81088 Rev. 1.3, 21-Feb-07
TSMF3710
Vishay Semiconductors
10000
0.01 0.02 0.05
1.25
e rel - Relative Radiant Power
t p /T = 0.005 Tamb < 60 C
I F - Forward Current (mA)
1000
1.0
0.75 0.5
100
0.2 0.5 DC
10
0.1
0.25 I F = 100 mA 0 820 870 - Wavelength (nm) 920
1 0.01
95 9985
0.1
1
10
100
15821
t p - Pulse Length (ms)
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Relative Radiant Power vs. Wavelength
1000
I e rel - Relative Radiant Intensity
0
10
20 30
IF - Forward Current (mA)
100 tP = 100 s tP/T = 0.001 10
40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6
1 0
18873
1 3 2 VF - Forward Voltage (V)
4
94 8013
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Relative Radiant Intensity vs. Angular Displacement
100 I e - Radiant Intensity (mW/sr)
10 t p = 100 s 1
0.1 1
18874
10
100
1000
I F - Forward Pulse Current (mA)
Figure 5. Radiant Intensity vs. Forward Pulse Current
Document Number 81088 Rev. 1.3, 21-Feb-07
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TSMF3710
Vishay Semiconductors Package Dimensions in mm
3.5 0.2 1.75 0.10
technical drawings according to DIN specifications
0.9
Mounting Pad Layout Pin identification 1.2 area covered with solder resist
2.6 (2.8)
+ 0.15
2.2
C
A
2.8
4 1.6 (1.9)
O
2.4
3
+ 0.15
Drawing-No.: 6.541-5025.01-4 Issue: 8; 22.11.05
95 11314-1
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4
Document Number 81088 Rev. 1.3, 21-Feb-07
TSMF3710
Vishay Semiconductors Temperature - Time Profile
948625
300
max. 240 C ca. 230 C
10 s
250
Temperature (C)
Adhesive Tape
200
215 C
150 100 50
2 K/s - 4 K/s full line dotted : typical :process limits max. 160 C 90 s - 120 s
max 40s
Blister Tape
Lead Temperature
0 0 50 100 150 200 250
Time (s)
Component Cavity
94 8670
Figure 8. Lead Tin (SnPb) Reflow Solder Profile
Figure 9. Blister Tape
Drypack
Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant.
3.5 3.1
2.2 2.0
Floor Life
Floor life (time between soldering and removing from MBB) must not exceed the time indicated in J-STD-020. TSM... is released for: Moisture Sensitivity Level 2, according to JEDEC, J-STD-020 Floor Life: 1 year Conditions: Tamb < 30 C, RH < 60 %
5.75 5.25 3.6 3.4
1.85 1.65
4.0 3.6 8.3 7.7
1.6 1.4
4.1 3.9
2.05 1.95
4.1 3.9
0.25
94 8668
Figure 10. Tape Dimensions in mm for PLCC-2
Drying
In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or Label. Devices taped on reel dry using recommended conditions 192 h at 40 C (+ 5 C), RH < 5 %
Document Number 81088 Rev. 1.3, 21-Feb-07
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TSMF3710
Vishay Semiconductors Missing Devices
A maximum of 0.5 % of the total number of components per reel may be missing, exclusively missing components at the beginning and at the end of the reel. A maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components.
Cover Tape Removal Force
The removal force lies between 0.1 N and 1.0 N at a removal speed of 5 mm/s. In order to prevent components from popping out of the bliesters, the cover tape must be pulled off at an angle of 180 with regard to the feed direction.
De-reeling direction
94 8158
> 160 mm 40 empty compartments min. 75 empty compartments
Tape leader
Carrier leader
Carrier trailer
Figure 11. Beginning and End of Reel
The tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartements. The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. The least comoponent is followed by a carrier tape trailer with a least 75 empty compartements and sealed with cover tape.
10.0 9.0
120
4.5 3.5 2.5 1.5
13.00 12.75 63.5 60.5
Identification Label: Vishay Type Group Tape Code Production Code Quantity
180 178
14.4 max.
94 8665
Figure 12. Dimensions of Reel
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Document Number 81088 Rev. 1.3, 21-Feb-07
TSMF3710
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 81088 Rev. 1.3, 21-Feb-07
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Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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